Recessed gate field effect transistor

摘要

A semiconductor device includes a semiconductor substrate; an active layer having a first surface and a second surface opposing each other and located on the first surface of the semiconductor substrate with the second surface of the active layer contacting the first surface of the semiconductor substrate; a recess structure at the first surface of the active layer and having a bottom within the active layer; a gate electrode on the bottom of the recess structure; a second surface drain electrode disposed on the second surface of the active layer adjacent the recess structure; and a source electrode disposed on the opposite side of the recess structure from the second. Consequently, even if the distance between the edge of the surface drain electrode gate electrode and the corner of the recess structure is reduced, a high gate-drain breakdown voltage can be realized.