Method for fabricating semiconductor device containing excessive silicon in metal silicide film

摘要

A method for fabricating a semiconductor device which includes a metal silicide film for electrically connecting a first silicon region containing a p-type impurity with a second silicon region containing an n-type impurity is disclosed. The method includes the step of depositing the metal silicide film so as to contain excessive silicon. Such excessive silicon is precipitated in silicide grain boundaries in the metal silicide film and thus makes a diffusion path of impurities along the silicide grain boundaries discontinuous.