发明名称 APPARATUS FOR PULLING UP SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To stabilize the quality of a semiconductor single crystal by lowering the flow velocity of a semiconductor melt flowing in a communicating part. SOLUTION: This apparatus for puling up the single crystal is formed with double crucibles 13 by storing the semiconductor melt into an outside crucible 13a disposed in a hermetic vessel 12 and placing an inside crucible 13b which is a cylindrical partition body in this outside crucible and is constituted to pull up the semiconductor single crystal from the semiconductor melt in the inner region of the inside crucible. The communicating part 13c for communicating the outer region and inner region of the inside crucible is formed in the inside crucible. Cusp magnetic field impressing means 16a, 16b are arranged on the outer side of the hermetic vessel. The position where the magnetic fields impressed by these cusp magnetic field impressing means are held nearly in a horizontal direction exists lower than the liquid level of the semiconductor liquid. The communicating part of the inside crucible exists in the part where the impressed magnetic fields are held nearly perpendicular.
申请公布号 JPH09194289(A) 申请公布日期 1997.07.29
申请号 JP19960004409 申请日期 1996.01.12
申请人 MITSUBISHI MATERIALS SHILICON CORP;MITSUBISHI MATERIALS CORP 发明人 ATAMI TAKASHI;FURUYA HISASHI;KIDA MICHIO
分类号 C30B15/12;C30B15/02;C30B15/30;C30B29/06;H01L21/208;(IPC1-7):C30B15/12 主分类号 C30B15/12
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