发明名称 |
Method of forming a semiconductor device having a capacitor with improved element isolation and operation rate |
摘要 |
A lower electrode of a capacitor for use in a semiconductor device includes a first semiconductor layer having a predetermined impurity concentration and a second semiconductor layer having an impurity concentration higher than that of the first semiconductor layer. As a result, intensification of an electric field at an end portion of the capacitor can be reduced. In addition, a word line is formed of a buffer layer and a main conductor layer to reduce a parasitic capacitance between the lower electrode of the capacitor and the word line.
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申请公布号 |
US5652168(A) |
申请公布日期 |
1997.07.29 |
申请号 |
US19950385517 |
申请日期 |
1995.02.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOMORI, SHIGEKI;TSUKAMOTO, KATSUHIRO |
分类号 |
H01L27/04;H01L21/02;H01L21/285;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/41;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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