| 摘要 |
FIELD: semiconductor technology, manufacture of device of heavy-current electronics and microelectronics by method of direction. SUBSTANCE: proposed process of manufacture of silicon structures consists in polishing of plates, their hydrophilization, treatment of plates in solution of hydrofluoric acid indeionized water, in joining of plates with polished sides in mentioned solution, drying of joined plates in air at temperature 100-130 C in the course of not less than 4.0 h under simultaneous application of pressure with value not less than 3 × 10Па, in subsequent heating of plates with rate not more than 10 deg/min starting from temperature 200 C with increase to 1000 C and curing at specified temperature. Grooves having depth not less than 0.3 μ are made in polished surfaces of plates with distance d between boundaries of grooves meeting relation 20 ≅ 1000 μ before hydrophilization. EFFECT: improved quality of manufacture silicon structures. |
