PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL REDUCED IN CRYSTAL DEFECT AND SILICON SINGLE CRYSTAL PRODUCED BY THE PROCESS

摘要

A silicon single crystal improved in the dielectric strength of oxide film is produced by the Czochralski method at a high efficiency. In the process, each silicon single crystal in the stage of crystal growth is regulated so that the time required for the silicon to pass through temperature ranges of from 1,250 to 1,200 °C is 10 to 20 minutes.