| 摘要 |
<p>A process for producing gallium nitride compound semiconductor includes the steps of forming a polycrystalline nitride layer (11a) on a substrate (10) in a first temperature range, forming a nucleus layer (11b) composed of a gallium nitride single crystal on the nitride layer (11a) in a second temperature range, growing the nucleus layer (11b) in a third temperature range so that the crystals of the layer (11b) can grow in the direction parallel to the surface of the substrate (10), and can join to each other, and growing the nucleus layer (11b) in the direction perpendicular to the surface of the substrate (10) in a fourth temperature range.</p> |
