发明名称 |
A SEMICONDUCTOR DEVICE WITH A LOW RESISTANCE OHMIC CONTACT BETWEEN A METAL LAYER AND A SiC-LAYER |
摘要 |
A semiconductor device comprises a semiconductor layer (1) of SiC, a metal layer (2) adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer (3) of a material having a smaller bandgap than the SiC of the SiC-layer placed between the SiC-layer and the metal layer. The SiC-layer is at least in the region next to said thin layer highly doped. The material of said thin layer is a Group 3B-nitride. |
申请公布号 |
WO9726678(A2) |
申请公布日期 |
1997.07.24 |
申请号 |
WO1997SE00062 |
申请日期 |
1997.01.17 |
申请人 |
ABB RESEARCH LTD.;HARRIS, CHRISTOPHER |
发明人 |
HARRIS, CHRISTOPHER |
分类号 |
H01L21/04;H01L29/45 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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