发明名称 Method of manufacturing an electron generating apparatus
摘要 It is an object of this invention to provide an electron generating apparatus which is hardly influenced by variations in driving voltage, an image forming apparatus using the electron generating apparatus, and a method of manufacturing and adjusting the same. The row wiring layers of a multi-electron-beam source (300) are sequentially selectively switched by a control circuit (302) and applied with a pulse voltage having a value about 1.05 to 1.5 times the maximum value of a normal driving voltage from a DC voltage source (301). The characteristics of all surface conduction electron-emitting devices of the multi-electron-beam source (300) are shifted to the high potential side. With this process, even when the driving voltage becomes high due to superposition of noise and the driving voltage, variations in electron-emitting characteristics caused by the voltage shift characteristics of the surface conduction electron-emitting devices can be prevented. <IMAGE>
申请公布号 EP0785564(A1) 申请公布日期 1997.07.23
申请号 EP19960307727 申请日期 1996.10.25
申请人 CANON KABUSHIKI KAISHA 发明人 FUJII, AKIRA;SUZUKI, HIDETOSHI;YAMAGUCHI, EIJI
分类号 G06F3/00;G09G3/22;H01J9/02;H01J9/44 主分类号 G06F3/00
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