发明名称 |
A semiconductor laser and a method for producing the same |
摘要 |
A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type; an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge. <IMAGE> |
申请公布号 |
EP0785602(A1) |
申请公布日期 |
1997.07.23 |
申请号 |
EP19970100683 |
申请日期 |
1997.01.17 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
IKEDA, HIROAKI;OHBAYASHI, KEN |
分类号 |
H01S5/00;H01S5/20;H01S5/22;H01S5/223;H01S5/323 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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