| 发明名称 |
Method of forming tungsten-silicide |
| 摘要 |
<p>A method of forming a silicide on a silicon layer. First, a monosilane based tungsten-silicide layer is formed on the silicon layer. Next, a dichlorosilane based tungsten-silicide layer is formed on the monosilane based tungsten-silicide layer. <IMAGE></p> |
| 申请公布号 |
EP0785574(A2) |
申请公布日期 |
1997.07.23 |
| 申请号 |
EP19970300079 |
申请日期 |
1997.01.08 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CZARNIK, CORY M.;RINNEN, KLAUS-DIETER;ACHUTHARAMAN, VEDAPURAM S.;VENKATESAN, MAHALINGAM |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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