Method of producing clear potential contrast image through scanning with electron beam for diagnosis of semiconductor device and electron beam testing system used therein

摘要

An electron pulse signal (PLS) is repeatedly radiated on a target spot (11c) applied with a certain potential for measuring a variation of secondary electron intensity, and a discrete value (-Th2, -Th1, Th1, Th2) is assigned to each variation between the two secondary electron intensities so as to eliminate an electrical influence of an insulating passivation layer (11e) over the target spot (11c) from a potential contrast image. <IMAGE>