| 摘要 |
PURPOSE:To shorten turn-off time by a method wherein a short region is planarly sandwiched between or surrounded with anode regions and the pitch between the anode regions is specified. CONSTITUTION:On a high-resistance semiconductor substrate, p<+> anode sections 6 and n<+> anode short sections 5 in contact with said p<+> anode sections 6 are formed. An anode section 6 and an anode short section 5 are short-circuited by an anode electrode 8. An anode short section 5 is planarly sandwiched between or surrounded with anode sections 6. Depletion layers of a width Wp, spreading toward an n<-> high-resistance layer 4 and dependent upon the diffusion potential between an anode section 6 and the n<-> high-resistance layer 4, connect or are in contact with each other at a location between two anode sections 6, and the pitch L between two anode sections 6 is so set that it will be not more than twice Ln that is the diffusion distance of electrons. This design reduces turn-off time. |
