| 摘要 |
PURPOSE:To prevent decrease of dielectric constant and leakage of current in a semiconductor device having a capacitor produced by a high dielectric layer containing an oxide of a transition metal, by interposing barrier films of a high-melting point metallic compound between a silicon electrode and the high dielectric layer. CONSTITUTION:In order to manufacture a semiconductor device in which a high dielectric layer 13 containing an oxide of a transition metal is interposed between two electrodes to produce a character and at least one of the electrodes is formed of silicon, barrier films 11, 12 and 14 of a compound of a highmelting point metal are interposed between the silicon electrode and the high dielectric layer 13. For example, a TiSi2 layer 11 is deposited on the silicon exposed surface of a region of a P-type semiconductor substrate 1 surrounded by an element isolating oxide film 8 to a thickness of 500Angstrom , and then a TiN film 12 is deposited also to a thickness of 500Angstrom . Subsequently, a Ta2O5 film 13 is deposited to a thickness of 100-1000Angstrom and then a polysilicon layer 15 is deposited thereon to a thickness of 4000Angstrom and doped with phosphorus. |
