| 摘要 |
PURPOSE:To speed up operations by a method wherein an emitter electrode is built in an emitter region on a semiconductor substrate and the emitter electrode is equipped with side walls. CONSTITUTION:A diffusion region 21 is provided in a substrate 20 of the plane orientation (100), after which a P-type epitaxial layer 22 is allowed to grow. Next, after the formation of a diffusion region 23, an oxide film 24 is formed, and then a diffusion region 25 is formed so deep as to reach the diffusion region 21. A thermal oxide film 26 is formed, B<+> ions are implanted, and a heat treatment is accomplished. A part of the film 26 positioned on a region 27 is allowed to peel off, a polycrystalline silicon film 28 is deposited, and then As<+> ions are implanted. A process follows wherein the polycrystalline silicon film 28 is patterned for the construction of electrodes 281, 282, and 283, after which a thermal oxide film 29 is formed, when As diffusing out of an emitter electrode results in an emitter region 30. Ions P<+> and then B<+> are implanted for the realization of a high voltage withstanding structure. A CVD oxide film 31 is deposited, which is next etched back for partial retention. Implantation is accomplished of As<+> and BF<+>2, which is followed by a heat treatment whereby source and drain regions 321, 322, 331, 332 and a base region 34 are formed. A passivation film 35 is deposited, and an electrode 36 is built. In this way, base resistance just under the emitter region may be reduced. |
