| 摘要 |
PROBLEM TO BE SOLVED: To observe the profile or generating position of a crystal defect causing a failure, and perform a special observation method for identifying the property of the crystal defect. SOLUTION: The periphery of a defective position present in a highly integrated element is marked, whereby a defective position is specified, a sample by a mirror polishing for removing an unnecessary area in transmission type electron microscopic observation is manufactured, and the sample is thinned from the reverse side, for example, to about 100μm by polishing. A sample 13 is further dimpled from the reverse side. The deepest part of the dimple is set in the center of the sample 13, or the marking position of the sample surface. The film thickness of the deepest part is set to about 10μm by dimpling. Finally, ion milling is performed from the sample reverse side, whereby the defective part periphery is thinned to the extent to which an electron beam can be transmitted.
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