| 摘要 |
PROBLEM TO BE SOLVED: To restrain deterioration of reading speed, and prevent malfuction over a wide operating voltage range, without increasing the cost. SOLUTION: A column decoder 50 which performs decoding operations according to common address data, and memory cell TRn and a memory cell TRRn for correction which are selected via a column decoder 50R for correction are connected with differential input terminals of a sense amplifier 30. A memory cell TR1 selected by an address before one time and a memory cell TRn selected by an address of this time are connected with the same word line WLS. When a memory cell TR1 selected before two times is in the state of conduction, the transistor TRS1 connected with a bit line BLR1 for correction which has been selected before one time is held in the state of conduction. The memory cell for correction selected by the address before one time is connected with a bit line for correction. |
