| 摘要 |
PROBLEM TO BE SOLVED: To inspect etching depth in a short time without an expensive measuring instrument, by performing etching using an etching mask wherein a plurality of windows have the same form and size, and intervals of the windows are different, and recognizing the minimum pattern width of the tops of protrusions left in recessed parts. SOLUTION: An etching mask 24b wherein a plurality of windows have the same form and size, and intervals of the windows are different are formed on a semiconductor wafer 10. By etching the semiconductor wafer 10 exposed in the window region of the etching mask 24b, recessed parts 26 are formed. After the etching mask 24b is eliminated, the minimum pattern width is recognized out of the widths of tops 17, 19, 21 of protrusions of the semiconductor wafer 10 left between the recessed parts 26. The etching depth is inspected from the window pattern interval of the etching mask 24b which corresponds to the minimum pattern width. For example, III-V compound semiconductor is used as the material of the semiconductor wafer 10. |
