| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain an interface leak current and a tunnel leak current and enable high speed operation, by constituting a junction field-effect transistor wherein a thin film active layer is sandwiched between a first conductive layer and a second conductive layer, on an insulating substrate. SOLUTION: On an insulating substrate 2, a first electrode A is formed, thereon a first conductive layer 3 composed of a first conductivity type is formed, and thereon a thin film active layer 4 composed of the other conductivity type is formed. On the thin film active layer 4, a second conductive layer 5 composed of a conductivity type is formed and thereon a second electrode B is formed. The thin film active layer 4 is sandwiched between the first conductive layer 3 and the second conductive layer 5. The active layer 4 is made a boundary, and a third electrode C which is electrically connected with the thin film active layer 4 on one side, and a fourth electrode D which is electrically connected with the thin film active layer 4 on the other side are arranged. Thereby a junction field-effect transistor provided with a thin film active layer 4 is constituted. The interface leak current is little, the tunnel leak current also can be restrained, and high speed operation is enabled.</p> |
