| 摘要 |
PCT No. PCT/JP93/01850 Sec. 371 Date Aug. 10, 1995 Sec. 102(e) Date Aug. 10, 1995 PCT Filed Dec. 21, 1993 PCT Pub. No. WO94/15366 PCT Pub. Date Jul. 7, 1994The semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.
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