发明名称 |
Temperature compensated reference for overerase correction circuitry in a flash memory |
摘要 |
A reference circuit for overerase correction in a flash memory includes a reference flash memory cell biased in a substantially similar manner to that of an overerased flash memory cell. The leakage current for the reference flash memory cell is preset to a tolerable level of leakage current for a maximum operating temperature of the flash memory and the reference flash memory cell tracks the temperature characteristics of the overerased flash memory cell, to avoid costly overcorrection at high temperatures.
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申请公布号 |
US5650966(A) |
申请公布日期 |
1997.07.22 |
申请号 |
US19950551422 |
申请日期 |
1995.11.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CLEVELAND, LEE E.;CHEN, JOHNNY C. |
分类号 |
G11C16/28;G11C16/34;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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