发明名称 |
Method of making non-uniformly nitrided gate oxide |
摘要 |
A method of making a semiconductor device in which a polysilicon gate is separated from a semiconductor substrate by a re-oxidized nitrided oxide film and in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform. The concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. The non-uniform concentrations are provided by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing processes.
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申请公布号 |
US5650344(A) |
申请公布日期 |
1997.07.22 |
申请号 |
US19950503048 |
申请日期 |
1995.07.17 |
申请人 |
HARRIS CORPORATION |
发明人 |
ITO, AKIRA;GASNER, JOHN T. |
分类号 |
H01L21/28;H01L21/336;H01L29/51;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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