| 摘要 |
A power semiconductor device (P) has first and second main electrodes (D) and (S) for coupling a load (L) between first and second voltage supply lines (2 and 3), a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device (P) a current that flows between the first and sense electrodes (D and S1) and is indicative of the current that flows between the first and second main electrodes (D and S). A current mirror arrangement (5) is provided having a first current path (5a) for passing a given current (I1) and a second current path (5b) for mirroring the given current. A control semiconductor device (M3) has first and second main electrodes (d and s) coupled between the control electrode (G) and the second main electrode (S) of the power semiconductor device (P) and a control electrode (g) coupled to the second current path (5b). The sense electrode (S1) of the power semiconductor device (P) is coupled to the second current path (5b) for causing, when the current provided by the sense electrode (S1) approaches the given current (I,) the control semiconductor device (M3) to be rendered conducting to provide a conductive path between the control and the second main electrodes (G and S) of the power semiconductor device (P) to reduce the voltage at the control electrode and so regulate the current through the power semiconductor device.
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