| 摘要 |
PROBLEM TO BE SOLVED: To secure that a slip is hard to arise and that the strength of a sub strate is hard to drop by making the semiconductor substrate contain oxygen in the range of specified pieces and oxygen deposits of polyhedrons in the speci fied range of density, in the specified extent from the surface of itself. SOLUTION: Oxygen ions of 10<18> -10<20> pieces/cm<3> are implanted only into the extent of 10mm or under from the periphery of an Si water 10a, which contains oxygen in the range of (5-10)×10<17> pieces/cm<3> , by controlling an X scan 5a and a Y scan 5b, using an ion implantation device. Furthermore, in nitrogen gas atmosphere, it is heat-treated in two stages of 8-16 hours at 750-850 deg.C and 1-4 hours at 1-50-1150 deg.C. Then, in the extent of 10mm or under from the periphery of the Si water 10a, it is made to contain the SiO2 deposits of the polyhedrons in the density of 10<8> -10<10> /cm<3> .
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