| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for the production of an oxide single crystal effective for preventing the generation of cracks and the inclusion of foreign materials in the single crystal in the case of producing a single crystal expressed by the formula Pb (B<1> , B<2> )1-x Tix }O3 and suppressing the generation of crack in an oscillator even after the polarization treatment. SOLUTION: This oxide single crystal is composed of a composite perovskite compound expressed by the formula Pb (B<1> , B<2> )1-x Tix }O3 ((x) is 0-0.55; B1 is Zn, Mg, Ni, Sc, Yb or In; B2 is Nb or Ta) and having a sintered density corresponding to >=99% of the theoretical density. The smooth surface of a sintered ceramic material 2 having one smooth surface is brought into contact with the smooth surface of a seed single crystal 1 having one smooth surface and having a lattice constant falling within±10% of the lattice constant of the sintered ceramic material 2 and the contacted material is heated in a closed vessel 5 in a lead atmosphere at 1000-1450 deg.C.
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