| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject thin film having low impurity content and excellent flatness and crystallinity by forming a specific layer on a substrate surface and growing a GaN single crystal film by a vapor-phase growing process of a GaN single crystal thin film using GaAs as a substrate crystal. SOLUTION: A Ga-containing chloride (e.g. GaCl) or exclusively an organometallic compound (e.g. trimethylgallium) is supplied to the surface of a substrate together with a carrier gas (e.g. H2 gas) to form an atomic Ga layer on the substrate surface and then a GaN single crystal film is grown on the substrate. As an alternative, a substrate is supplied with e.g. GaCl and AsH3 , a GaAs buffer layer is preparatorily deposited by a vapor-phase deposition method, a Ga-containing chloride or exclusively an organometallic compound is supplied together with a carrier gas to form an atomic Ga layer on the substrate surface and a GaN single crystal film is grown on the surface. |
