| 摘要 |
PROBLEM TO BE SOLVED: To obtain a Perovskite-type oxide dielectric film having excellent crystallinity by a method wherein a Perovskite-type oxide layer which is made of material different from the material of a dielectric thin film and contains Ru is provided in a boundary between a lower electrode and the dielectric thin film. SOLUTION: A barrier layer 4 which blocks the reaction between RuO2 and Si and has a thickness of 50nm and a lower electrode 2 with a thickness of 200nm are built up on an Si substrate 5. Then an SrRuO3 layer which is a Perovskite-type oxide layer 1 containing Ru is formed by a sputtering method while a wafer is heated to 600 deg.C. After a wafer temperature is lowered to 450 deg.C, Sr(DPM)2 which is raw material of Sr, Ti(i-OC3 H7 )4 (TIP) which is raw material of Ti and O2 plasma are supplied to form an SrTiO3 film 3 which is a Perovskite-type oxide dielectric film 3 with a thickness of 50nm. After the SrTiO3 film 3 is formed, the wafer is taken out of a CVD film forming chamber and an Au film which is an upper electrode 6 with a thickness of 300nm is deposited on the SrTiO3 film 3. The thin film capacitor shows a dielectric constant of 160 and a leakage current density of 1×10<-7> A/cm<2> (1V is applied) which are satisfactory. |
