| 摘要 |
PROBLEM TO BE SOLVED: To reduce data error due to interaction between adjacent capacitors, form the plate electrode of a capacitor in a trench region, and reduce the leak current induced along the boundary surface of a semiconductor substrate. SOLUTION: A first trench 9-a is formed on a semiconductor substrate and filled with an oxide film as an insulating film. A second trench 52a and a third trench 52b are formed on both sides of the first trench 9-a. On both side surfaces of the second and the third trenches 52a, 52b, plate electrodes 53 are formed by using polysilicon doped with boron, and storage electrodes 8-a are formed by using polysilicon doped with phosphorus. |
