SEMICONDUCTOR DEVICE HAVING OHMIC ELECTRODE AND FORMING METHOD OF OHMIC ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide an ohmic electrode excellent in quality and uniformity. SOLUTION: A first N-ZnSe epitaxial layer 2 is formed on the surface of a ZnSe substrate 1. A second N-ZnSe epitaxial layer 3 is formed on the first ZnSe epitaxial layer 2. In the second N-ZnSe epitaxial layer 3, voids exist which are formed because the number of Se atoms is relatively large. On the surface of the second N-ZnSe epitaxial layer 3, an ohmic electrode 4 is formed.