| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of an aperture and its manufacturing method wherein the margin for fine structure between an aperture part and adjacent wiring is ensured, and the number of processes can be reduced. SOLUTION: A first interlayer insulating film 7 is formed on a semiconductor substrate 1 on which an element is formed. A first step aperture part 9b consists of an upper aperture part having a large diameter and a lower aperture part having a small diameter. The surface of a first buried conducting layer 11 does not protrude from the surface of a first interlayer insulating film 7. A second interlayer insulating film 14 is formed on the first step aperture part 9b, and a second step aperture part 18 turning to the node electrode of a capacitor or the like is formed. The first step aperture part 9b is formed as a pad capable of obtaining a sufficient margin, so that the margin for forming the second step aperture part 18 can be ensured. |
