| 摘要 |
<p>The semiconductor film depsn. on insulating substrates uses a microwave plasma enhanced chemical vapour deposn. (MW-PCVD) apparatus which contains, a plasma-generating chamber (701) with a microwave connection. There is also a film-depsn. chamber (702) which is connected with the plasma-chamber via a grid (711). This chamber contains the insulating substrate (713) which is placed on a conductive sample-holder (708). The plasma is generated by admitting a gaseous source material through a connection (705) to interact with the microwave energy which enters via a dielectric window (703). This plasma is directed into the film depsn. chamber while between the grid and the substrate hodler a high frequency (HF) bias is applied of 100-500V with a frequency of 20-500 MHz. The substrate is held at a temp. of pref. 200-400 deg.C, and the vacuum pressure inside the depsn. chamber is pref. 13.3-667 mPa. Also claimed is the chamber as described above to which a provision for generating a magnetic field has been added (709). In this case the pressure in the depsn. chamber is pref. 0.133-667 mPa, with the other conditions is the same ranges as before. USE/ADVANTAGE - The method is capable of depositing a polycrystalline film of a semiconducting Group IV element as well as of semiconducting cpds. of Groups II-VI and III-V of the Periodic System. The crystallinity of the films is excellent and the carrier-mobility is high.</p> |
