发明名称 THREE-DIMENSIONAL ETCHING PROCESS
摘要 A method of forming three-dimensional structures on a substrate by a single reactive ion etch run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give rise to reduction in the mask area and exposure of further areas of substrate.
申请公布号 CA2242634(A1) 申请公布日期 1997.07.17
申请号 CA19972242634 申请日期 1997.01.09
申请人 THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND 发明人 DEAN, ANTHONY BRIAN;DUTTON, DAVID THOMAS
分类号 G02B3/00;G03F7/00;G03F7/40;H01L21/033;H01L21/302;H01L21/3065;(IPC1-7):G03F7/36 主分类号 G02B3/00
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