发明名称 Monolithically integrated semiconductor laser-modulator combination
摘要 A monolithically integrated combination of a laser diode and a modulator is disclosed. An area of a common active stratified structure (2) is used for the laser and an adjacent part of said stratified structure is used for the modulator. The stratified structure is an MQW structure with mutually decoupled asymmetrical potential wells. The material compositions in the potential wells have the smallest energy bandgap at the n-side and are adapted in such a way to the stratified structure that when a potential difference is applied in the blocking direction, there occurs a blue shift of the absorption edge beyond the laser wavelength.
申请公布号 DE19624514(C1) 申请公布日期 1997.07.17
申请号 DE19961024514 申请日期 1996.06.19
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 STEINMANN, PHILIPP, 80469 MUENCHEN, DE;STEGMUELLER, BERNHARD, DR., 86163 AUGSBURG, DE;BORCHERT, BERND, DR., 85368 MOOSBURG, DE
分类号 H01S5/026;H01S5/34;(IPC1-7):H01S3/19;H01S3/103 主分类号 H01S5/026
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