发明名称 Halbleiterspeicheranordnung
摘要 A semiconductor memory device having: a RAM port for randomly accessing a memory cell (1) array having memory cells disposed in matrix; a SAM port for serially accessing data of one row of the memory cell array (1); a mode switching unit (203) for switching the operation mode of the SAM port between an ordinary data output mode and a test mode, upon externally receiving a mode switching signal; and an address pointer outputting unit (104, 201, 501) for outputting an address pointer of the SAM port when the operation mode is switched to the test mode by the mode switching unit (203). <IMAGE>
申请公布号 DE69220256(D1) 申请公布日期 1997.07.17
申请号 DE1992620256 申请日期 1992.01.23
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP;TOSHIBA MICRO-ELECTRONICS CORP., KAWASAKI, JP 发明人 IKAWA, TATSUO, 201, MASON ISHIZUKA, KAWASAKI-SHI, KANAGAWA-KEN, JP;OHSHIMA, SHIGEO, YOKOHAMA-SHI, KANAGAWA-KEN, JP
分类号 B23F5/02;B23F23/00;B23F23/12;G11C7/10;G11C11/401;G11C11/41;G11C29/00;G11C29/02;G11C29/04;G11C29/14;G11C29/20;G11C29/56;(IPC1-7):G11C7/00 主分类号 B23F5/02
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