发明名称 METHOD AND APPARATUS FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY SUBSTRATE, AND APPARATUS AND METHOD FOR EVALUATING SEMICONDUCTOR CRYSTALS.
摘要 An amorphous silicon film (2) is formed on a glass substrate (1) by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions (21) which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section (3). Switching elements including the island regions (21) as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section (4). The section (4) is divided to gate driving circuit sections (41) and source driving circuit sections (42) for driving thin film transistors formed in a pixel region (50). <IMAGE>
申请公布号 EP0598394(A3) 申请公布日期 1997.07.16
申请号 EP19930118519 申请日期 1993.11.16
申请人 TOKYO ELECTRON LIMITED 发明人 IMAHASHI, ISSEI;HAMA, KIICHI;HATA, JIRO
分类号 C23C16/24;G02F1/1362;H01L21/20;(IPC1-7):H01L21/82;H01L21/68 主分类号 C23C16/24
代理机构 代理人
主权项
地址