Epitaxial growth method

摘要

This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer (14) and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer (14) with an in-plane temperature distribution of 2 to 50 DEG C, and includes the steps of arranging the silicon wafer (14) in a reaction vessel (2), supplying into the reaction vessel (2) a source gas containing (a) silane, (b) 5 to 600 vol% of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer (14) by setting a vacuum degree of 10 to 200 torr in the reaction vessel (2) and heating the wafer (14) to 900 to 1100 DEG C. <IMAGE>