| 摘要 |
<p>A material for semiconductor substrate is composed substantially of tungsten and/or molybdenum mixed with 5-30 wt.% copper, 0.002-0.07 wt.% phosphorus, 0.1-0.5 wt.% one or two kinds selected from among cobalt, nickel, and iron. The material is manufactured by mixing together tungsten powder and/or molybdenum powder of 1 mu m in particle size, copper powder of 7 mu m in particle size, and small amounts of an iron-group metal and phosphorus or phosphorus compound, molding the mixture at a pressure of 1.0 ton/cm<2>, and then, sintering the molded body at a temperature which allows solid and liquid to coexist below the melting point of copper.</p> |
