| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a thick epitaxial layer subjected to lattice matching by bringing a soln. for growth prepd. by adding arsenic as an (n) type impurity into an indium soln. formed by dissolving silicon into contact with a semiconductor substrate. SOLUTION: The silicon single crystal substrate 1 is cleaned by sufficiently flattening its surface and is then fixed to a boat 3 by positioning the surface so as to face downward perpendicularly to the gravity direction. The soln. 2 for growth is prepd. by adding the silicon which saturates at a growth temp. or above into the indium which is a solvent. Further, indium arsenic, silicon arsenide, etc., are added as the (n) type impurity to the soln. until the desired impurity concn. is attained. A hydrogen atmosphere is maintained in a reaction tube 5 by shutting off the growth system from the outdoor air. The entire part of the reaction tube is heated by a heater. A piston 4 is moved to bring the soln. 2 for growth and the silicon single crystal substrate 1 into contact with each other where the temp. of the substrate 1 rises up to about 1000 deg.C. The substrate is then cooled at a cooling rate of about 0.5 deg.C/min and the growth of the epitaxial layer having about 15μm thickness is confirmed.</p> |
