| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method easy to adjust its offset regions to improve the uniformity of its offsets and capable of simplifying its manufacturing processes. SOLUTION: A manufacturing method of a semiconductor device comprises a step of forming a first insulation film 32 on a substrate 31 to form a contact hole 33 therein, a step of forming a semiconductor layer 34 on both the wall surface of the contact hole 33 and the surface of the first insulation film 32 present outside the contact hole 33, a step of introducing impurities into the portions of the semiconductor layer 34 which are present both in the bottom of the contact hole 33 and in the hole portion of the first insulation layer 32 to change the sidewall portion of the contact hole 33 into a semiconductor region 34c, and a process for forming an insulation layer 36 having a predetermined thickness in the bottom portion of the contact hole 33 to form a gate electrode 37a on the upper side thereof. |
