| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon single crystal suitable for producing the silicon single crystal of a large diameter sized >=8" diameter. SOLUTION: This apparatus is composed of a freely rotatable crucible for housing a silicon melt, a heater disposed to enclose the outer periphery of the crucible, electrodes for supplying a DC current to a heater, magnets for impressing magnetic fields horizontally to the silicon melt housed in the crucible and a freely rotatable pulling-up shaft for pulling up the silicon single crystal from the silicon melt. In such a case, the electrodes 7, 7' and the magnets 9, 9' are so arranged as to attain the state rotating at an angle larger then 0 deg. and smaller than 180 deg. in the counter clockwise direction from the state in which the direction of the magnetic lines of force running the center of the crucible and the direction of the current generated in the horizontal direction when the DC current is supplied to the heater 5 are aligned. |
