发明名称 |
Method for fabricating a bipolar transistor with a base layer having an extremely low resistance |
摘要 |
A base region structure involved in a bipolar transistor, wherein the base region comprises a compound semiconductor epitaxial layer formed in a recessed portion provided by etching in an upper region of the semiconductor substrate and the recessed portion has a depth corresponding to a thickness of the compound semiconductor epitaxial layer so that the base region has a top surface positioned at the same level as a top surface of the semiconductor substrate.
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申请公布号 |
US5648280(A) |
申请公布日期 |
1997.07.15 |
申请号 |
US19950533850 |
申请日期 |
1995.09.26 |
申请人 |
NEC CORPORATION |
发明人 |
KATO, HIROSI |
分类号 |
H01L29/73;H01L21/203;H01L21/318;H01L21/331;H01L29/165;H01L29/205;H01L29/732;H01L29/737;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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