THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To enable both high on characteristics and low leakage characteristics within the title thin film manufactured by using the manufacturing process line of the conventional bottom type amorphous silicon thin film transistor. SOLUTION: A semiconductor thin film 4 forming a channel region is formed of a true polysilicon. Accordingly, the high on current characteristics comparing with that of the conventional amorphous silicon thin film transistor can be displayed. Besides, the channel directional width of a channel protective film 5 is made respectively larger than that of the gate width of a gate electrode 2 0.3-2μm both on right and left side comparing with that of conventional amorphous silicon thin film transistor to be offset structured so that almost equivalent low leakage characteristics comparing with that of the conventional amorphous silicon transistor may be displayed.