| 发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
An inset oxide isolated integrated circuit, with multiple levels of inset oxide, polycrystalline regions, and channel stops. |
| 申请公布号 |
JPS52144985(A) |
申请公布日期 |
1977.12.02 |
| 申请号 |
JP19770044635 |
申请日期 |
1977.04.20 |
| 申请人 |
PHILIPS NV |
发明人 |
BERUNARUDO HENDORITSUKU BEIRAN;BIRUHERUMUSU HENRIKUSU KORUNER |
| 分类号 |
H01L21/76;H01L21/00;H01L21/32;H01L21/74;H01L21/762;H01L21/763;H01L21/8222;H01L23/535;H01L27/06 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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