| 摘要 |
An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the temperature of the polishing pad with an infrared temperature measuring device, has been developed. The process allows endpoint detection in-situ at the polishing apparatus, when polishing to remove a first layer of material and to stop the removal process when a second layer of material is exposed.
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