发明名称 |
Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region |
摘要 |
An asymmetrical IGFET including a lightly doped drain region, heavily doped source and drain regions, and an ultra-heavily doped source region is disclosed. Preferably, the lightly doped drain region and heavily doped source region provide channel junctions. A method of making the IGFET includes providing a semiconductor substrate, forming a gate with first and second opposing sidewalls over the substrate, applying a first ion implantation to implant lightly doped source and drain regions into the substrate, applying a second ion implantation to convert the lightly doped source region into a heavily doped source region without doping the lightly doped drain region, forming first and second spacers adjacent to the first and second sidewalls, respectively, and applying a third ion implantation to convert a portion of the heavily doped source region outside the first spacer into an ultra-heavily doped source region without doping a portion of the heavily doped source region beneath the first spacer, and to convert a portion of the lightly doped drain region outside the second spacer into a heavily doped drain region without doping a portion of the lightly doped drain region beneath the second spacer. Advantageously, the IGFET has low source-drain series resistance and reduces hot carrier effects.
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申请公布号 |
US5648286(A) |
申请公布日期 |
1997.07.15 |
申请号 |
US19960711383 |
申请日期 |
1996.09.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;FULFORD, JR., H. JIM;WRISTERS, DERICK J. |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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