| 摘要 |
PROBLEM TO BE SOLVED: To enhance the current-voltage characteristics by forming the resonance region of a resonance tunnel diode element of a superconductor thereby suppressing scattering of carrier in the resonance region. SOLUTION: The resonance region 2 of a resonance tunnel diode element is formed of a superconductor deposited directly on the surface of a substrate 1. It is formed in a region including a cathode region 4A and anode region 4B. The cathode and anode regions 4A, 4B are formed on the surface of each barrier region 3 while being separated from each other by a dimension corresponding to the length of resonance region 2. this structure suppresses scattering of carrier into the resonance region 2 and increases the quantity of current thus enhancing the current-voltage characteristics. |
