| 摘要 |
A fabrication method of storage electrode of cylindrical capacitor having multi-pillar maximized a surface area is disclosed. The method comprises the steps of: alternately depositing undoped amorphous Si films(9A,9B,9C) and doped amorphous Si films(10A,10B); forming a CVD oxide(11) and HSG(hemi-spherical grain) layer(12) on the resultant structure; patterning the undoped amorphous Si films and the doped amorphous films using the CVD and the HSG layers(11, 12) as a mask, thereby forming a maze-shaped trench; performing poly-oxidation using differences of oxidation between doped and undoped a-Si films; and removing the CVD oxide(11) and the HSG layer(12) using oxide wet etchant, thereby forming multi-pillar including sidewalls having concave and convex.
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