BIPOLAR TRANSISTOR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a high speed element having a high collector current without deteriorating the performance about the initial voltage and punch- through. SOLUTION: An n-epitaxial region 15 to be a collector region is formed on a p-type substrate 11, In ions are implanted in the region 15 to form a base region 25 and an emitter region 33 adjacent to the base region 25 is formed. The base formed by doping In forms a high speed transistor having a narrow base. Owing to the imperfect ionization of the In dopant, an element having a high collector current without deteriorating the performance about the initial voltage and punch-through can be formed.