| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a monolithic power CMOS integrated circuit device wherein for driving a motor, etc., current flowing-out and current flowing-in output circuits for powers which have good performances can be manufactured simply and a satisfactory overheat sensing circuit can be integrated. SOLUTION: On both surfaces of a wafer, an N-channel power MOS transistor (N.P.MOS) 3 and a P-channel power MOS transistor (P.P.MOS) 2 for a complementary power output circuit and a controlling BI.CMOS circuit are formed. In this case, wire-bondings are performed on both surfaces of leads B 6B of the lead frame of a package and on both surfaces of a chip, and also, a chip bonding is performed to the lead frame of the package, using a plurality of source electrodes of the P.P.MOS 2 as chip-bonding electrodes 15.</p> |
