| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device to be lessened in cell size and junction electrostatic capacitance improved in low Vcc characteristics by a method wherein an access transistor out of two transistors is of TFT structure. SOLUTION: A semiconductor layer of polysilicon or the like is arranged on a first insulating film 23 provided with a contact hole, and the first and second impurity region, 24a and 24b, of an access transistor are formed on the semiconductor layer. The second impurity region 24b comes into electric contact with a gate electrode 22 through the intermediary of the contact hole. A gate electrode 27 for the access transistor is arranged at a position between the first impurity region 24a and the second impurity region 24b on a second insulating film 26. By this setup, the access transistor is obtained as an NMOS TFT, so that cells are not required to be isolated from each other, and a semiconductor device of this constitution can be lessened in cell size and junction electrostatic capacitance and enhanced in low ] characteristics. |
